Cree

  • RF Power Amplifier Design Engineer

    Job Locations US-AZ-Mesa
    Requisition ID
    2018-7361
    Category (Portal Searching)
    RF Engineering
  • Job Description

    Job Summary

    Wolfspeed is one of the world’s leading suppliers of gallium nitride (GaN) wafers and devices for RF cellular communications, radar, and electronic warfare. Our business is growing rapidly and needs a RF Power Amplifier Design Engineer for our Product Development team in Mesa, AZ. The primary focus of this role is the design, test, and evaluation of cutting edge products using GaN HEMT and Si-LDMOS technologies.

     

    What can we do for you?

    • Continue the acceleration of GaN adoption across the wireless frequency spectrum.
    • Be a key member in a vertical integrated GaN/Si-LDMOS company joining the RF product development team.  
    • Work for a small team (you will not be a “number” here!), but nor is this a startup. This is a world class, winning organization with a nimble footprint.
    • Be a part of a strong technical team that values agility, contribution, and enjoying work

    What can you do for us?

    • Design GaN and Si-LDMOS high power amplifiers for cellular applications
    • Design and develop products for high power, high efficiency, and wide band power amplifier solutions for cellular applications.
    • Combined use of non-linear model based analysis, as well as load pull data to design Class AB/Doherty circuits for best performance.  
    • Explore harmonic effects and high efficiency modes of RF power amplifier operation.
    • Tune/optimize device circuit performance using RF/microwave test equipment.    

    What you need for success:

    • BSEE or equivalent experience
    • At least 3 years’ experience in RF power amplifier design using Si-LDMOS or GaAs/GaN HEMT
    • Working experience with ADS/AWR non-linear simulation tools
    • Good understanding of Doherty amplifier circuit design and operation, load modulation, loss mechanisms, device asymmetry and topology selection
    • Good understanding of RFPA theory, load line theory, impact of harmonic and fundamental impedance
    • Hands-on experience with board level tuning and optimization of amplifier matching networks
    • Proficient in the operation of RF laboratory equipment, including signal generator, network and spectrum analyzers, power meter, oscilloscope, etc.
    • Ability to work within schedule restraints
    • Excellent communication and team skills

    Highly preferred skills and certifications:

    • MSEE or equivalent experience
    • Experienced user of 2.5 and 3D electromagnetic simulation software
    • Good understanding of digital pre-distortion (DPD), and corresponding RF power amplifier design optimization

    Keywords: LDMOS, RF, PA, Power Amplifier, Doherty, GaN, GaAs, HEMT, ADS, and AWR

    Overview

    At Cree, we’ve spent more than 30 years developing industry firsts as a leader in wide bandgap semiconductor technology. Not familiar with all of our products? That is because we are a part of the invisible revolution; if we do our job right you will never know we were there. Our products make impossible possible like our LEDs that power cities to our Silicon Carbide (SiC) and Gallium Nitride (GaN) components that power electric vehicles, solar energy, telecommunications and industrial, military and aerospace solutions.

     

    We believe in enabling the world to do more with less. That’s why we encourage each other to think unconventionally, take ownership and solve real problems. Interested in a career at Cree? We want to meet you. Submit your application now.

     

    We are an equal opportunity employer and all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, national origin, disability status, protected veteran status, or any other characteristic protected by law.

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