• Research Scientist - Epi R&D

    Job Locations US-NC-Durham
    Requisition ID
    Category (Portal Searching)
    Materials Engineering
  • Job Description

    Wolfspeed (Cree’s Power & RF division) is seeking a Research Scientist to perform research and development in SiC and GaN epitaxial growth and their associated process inputs (particularly substrates) as well as subsequent epitaxial layer metrologies while supporting and performing Epitaxial layer production.


    What can Wolfspeed do for you?


    • Work with and learn from a broad experienced team of Wideband gap semiconductor technologists producing the World’s highest quality and volume of SiC and GaN epitaxial layers.
    • Solve stimulating real-world problems that immediately effect quality and throughput of these layers enabling the development and production of advanced Power and RF devices.
    • Be empowered to develop the next generation epitaxial tool sets to further increase quality and throughput while reducing cost.
    • Work with other innovative specialists developing the next generation of metrologies and devices. Opportunities for future advancement.


    What can you do for Wolfspeed?


    • Support, guide and help schedule epitaxial layer production runs.
    • Write and modify epitaxial growth recipes.
    • Design, implement and monitor studies and improvements in epitaxial layer growth processes and hardware.
    • Monitor day-to-day layer and equipment parameters from R&D and production epitaxial growth runs. Diagnose and repair equipment and processes in consultation with equipment and process engineers and technicians. 
    • Prepare reports and presentations for management, colleagues and customers (industrial and governmental).
    • Contribute to external academic publications and presentations.
    • Assist Material’s Sales department by providing data and problem solving.
    • Train and mentor engineers, technicians, and operators in the proper operation of epitaxial growth and characterization equipment.


    What you need for success:


    • PhD or an equivalent advanced degree with 5 years or more work in the growth of SiC or GaN epitaxial layers.
    • Able to work and assist as needed in a 24/7 work environment with a baseline Sunday-Thursday daily work schedule.


    Highly preferred skills and certifications:


    • Highly experienced with all aspects of commercial epitaxial growth equipment.
    • Adept with the use of statistical methods and programs (for example ACCESS, EXCEL, JMP) of data analysis to uncover small but significant trends in key growth parameters.
    • Good verbal, written and personal communication skills.
    • Able to collaborate and reach consensus with other skilled professionals but also take direction when necessary.
    • Comfortable making presentations to large groups when needed.


    At Cree, we’ve spent more than 30 years developing industry firsts as a leader in wide bandgap semiconductor technology. Not familiar with all of our products? That is because we are a part of the invisible revolution; if we do our job right you will never know we were there. Our products make impossible possible like our LEDs that power cities to our Silicon Carbide (SiC) and Gallium Nitride (GaN) components that power electric vehicles, solar energy, telecommunications and industrial, military and aerospace solutions.


    We believe in enabling the world to do more with less. That’s why we encourage each other to think unconventionally, take ownership and solve real problems. Interested in a career at Cree? We want to meet you. Submit your application now.


    We are an equal opportunity employer and all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, national origin, disability status, protected veteran status, or any other characteristic protected by law.


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